Germanene, as an artificial graphene-like near room temperature topological insulator, compatible with ubiquitous silicon technology, is potentially the most promising artificial Xene for ultra-scale nanoelectronics.Here, we follow its emergence and development 30x24x24 wall cabinet when prepared in situ under ultra-high vacuum in clean and controlled conditions by dry epitaxy on prominent metal surfaces (e.g.
, aluminum, silver, gold).We describe its predicted electronic properties and its birth in 2014, even if it was just a renaissance, as it was only understood after 51 years after an undeciphered copyright lost in oblivion.We emphasize the lifting of germanene flakes from an aluminum template with the tip of a scanning tunneling microscope, and their repositioning to form bilayer germanene with Bernal stacking.
Finally, cocktail tree for sale we discuss the growth of monolayer germanene in a single phase harboring Dirac fermions, following a bottom-up synthesis strategy by segregation on a gold thin film in epitaxy on a germanium support.